| PART |
Description |
Maker |
| K4S510832D K4S281632I K4S561632H M366S0924IUS K4S6 |
SDRAM Product Guide
|
Samsung semiconductor
http://
|
| K4R881869I-DC |
Direct RDRAM Product Guide
|
Samsung semiconductor
|
| MINISMD075 MINISMD050 MINISMDC050 MINISMDC075 MINI |
miniSMD Selection Guide and Product Data
|
Tyco Electronics
|
| RXE020 RXE025 RXE050 RXE065 RXE040 RXE090 RXE110 R |
(RXE Series) Selection Guide and Product Data
|
Raychem circuit protection
|
| PLED18Q12 PLED5HT PLED13Q12 PLED13S PLED18S PLED6M |
Electronics Circuit Protection Product Selection Guide
|
Littelfuse
|
| ICS9220 |
Programmable RambusTM XDRTM Clock Generator
|
Integrated Device Technology
|
| IT8710F |
100-pin LPC I/O Programming Guide v0.1 | PC Product Line 100针LPC I / O编程指南v0.1 |个人电脑产品
|
TE Connectivity, Ltd.
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8 |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
|
Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
|
| CYM7232 CYM7264 7232SP |
DRAM Accelerator Module(DRAM加速器模块) DRAM CONTROLLER, XMA
From old datasheet system
|
Cypress Semiconductor, Corp.
|
